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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5610 FEATURES Power dissipation PCM: 1 W (Tamb=25) TO-92L TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR 3. BASE Collector current -1 A ICM: Collector-base voltage -25 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10A, IE=0 Ic=-1mA, IB=0 IE=-10A, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-500mA IC=-800mA, IB=-80mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, IE=0, f=1MHz -25 -20 -5 -1 -1 60 240 -0.5 -1 350 38 A A V V MHz pF fT Cob CLASSIFICATION OF hFE Rank Range A 60-120 B 85-170 C 120-240 |
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